Oxide growth enhancement related to annealing induced arsenic accumulation in the Si/SiO2 interface region

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages

  Berger, Horst H ^a   Müller, Bernt ^a   Jacob, Kerstin ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING SILICON; SILICA;

OXIDE GROWTH; STEAM OXIDATION ENHANCEMENT;

OXIDATION;

EID: 0029732786     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836376     Document Type: Article

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