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Volumn 143, Issue 1, 1996, Pages 228-232
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Al-Ge reflow sputtering for submicron contact hole filling
a a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
DRY ETCHING;
ELECTRIC CONDUCTIVITY MEASUREMENT;
GERMANIUM ALLOYS;
HIGH TEMPERATURE PROPERTIES;
LEAKAGE CURRENTS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON;
SILICA;
SPUTTERING;
SUBSTRATES;
ALUMINUM ALLOY REFLOW TECHNOLOGY;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
MOLYBDENUM SILICIDE;
SPUTTERING TEMPERATURE;
SUBSTRATE TEMPERATURE;
THERMAL OXIDATION;
TITANIUM TUNGSTEN;
ALUMINUM ALLOYS;
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EID: 0029732734
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1836413 Document Type: Article |
Times cited : (3)
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References (13)
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