Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 279-282

  Falcigno, P ^a   Munzel N ^a   Holzwarth, H ^a   Schacht, H T ^a   Mertesdorf, C ^a   Bronner, W ^b   Kaufel, G ^b   Timko, A ^c   Nalamasu, O ^c  

^a OCG Microelectronic Materials AG   (Switzerland)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE COMPOUNDS; LITHOGRAPHY; REACTIVE ION ETCHING; TEMPERATURE; TITANIUM NITRIDE;

CARBON TETRAFLUORIDE; PATTERN TRANSFER; POST EXPOSURE BAKE TEMPERATURE; REACTIVE ION ETCHER;

PHOTORESISTS;

EID: 0029732128     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00245-6     Document Type: Article

References (1)

1. C. Mertesdorf, N. Münzel, H. Holzwarth, P. Falcigno, H.-T. Schacht, O. Rohde, R. Schulz, "Structural Design of Ketal and Acetal Blocking Groups in a 2-Component Chemically Amplified Positive DUV-Resists", Proc. SPIE, Adv. Resist Technol. Process. XII, 2438, (1995), 84-89.