Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 271-277

  Gomez, F J ^b   Garrido, J ^b   Martinez, J ^b   Piqueras, J ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; BAND STRUCTURE; DEHYDROGENATION; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; INFRARED SPECTROSCOPY; METHANE; PLASMAS; STOICHIOMETRY;

AMORPHOUS SILICON CARBIDE; ELECTRON CYCLOTRON RESONANCE PLASMA; ELLIPSOMETRIC SPECTROSCOPY; FILM STRESS; RAPID THERMAL ANNEALING; STRETCHING BANDS;

SILICON CARBIDE;

EID: 0029732126     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836421     Document Type: Article

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