Polysilicon TFT technology will solve problems of mobility, pixel size, cost, and yield

Solid State Technology

Volumn 39, Issue 1, 1996, Pages 113-120

  Chen, Sheau ^a,b,c,d,e   Hsieh, I C ^a,d,f,g,h  

^a XMR Inc   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c TEXAS A AND M UNIVERSITY   (United States)

^d XMR Inc

^e XMR Inc   (United States)

^f TAMKANG UNIVERSITY   (Taiwan)

^g NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^h ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COSTS; DISPLAY DEVICES; EXCIMER LASERS; INTEGRATED CIRCUIT LAYOUT; LASER BEAMS; LIQUID CRYSTAL DISPLAYS; PROBLEM SOLVING; SEMICONDUCTING SILICON;

CARRIER MOBILITY; FLAT PANEL DISPLAYS; MULTIPLE SMALL PITCH SCANS; POLYSILICON THIN FILM TRANSISTOR TECHNOLOGY; XENON CHLORIDE EXCIMER LASER;

THIN FILM TRANSISTORS;

EID: 0029731682     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

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