Optical studies of epitaxial GaN-based materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2693, Issue , 1996, Pages 86-96

  Song, Jin Joo ^a   Shan, W ^a   Schmidt, Theodore ^a   Yang, X H ^a   Fischer, A ^a   Hwang, S J ^a   Taheri, Bahman ^a   Goldenberg, Barbara L ^a   Horning, R ^a   Salvador, A ^a   Kim, W ^a   Aktas, O ^a   Botchkarev, A ^a   Morkoc, Hadis ^a  

^a OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LASERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; RELAXATION PROCESSES; SPECTROSCOPY;

GALLIUM NITRIDE; STIMULATED EMISSION; WIDE-BAND-GAP STRUCTURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029728222     PISSN: None     EISSN: None     Source Type: None    
DOI: 10.1117/12.238943     Document Type: Conference Paper

References (19)