Atomic force microscopy study of the initial nucleation of GaN on sapphire

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 237-242

  Richards Babb, M ^a   Buczkowski, S L ^a   Yu, Zhonghai ^a   Myers, T H ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PLASMA SOURCES; SAPPHIRE; X RAY DIFFRACTION;

DISLOCATION DENSITIES; GALLIUM NITRIDE; NUCLEATION ISLAND SIZE; NUCLEATION LAYERS; THICK LAYERS; TWO DIMENSIONAL GROWTH;

NUCLEATION;

EID: 0029727120     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)