Grain boundary dopant and heat treatment effects on the electrical properties of polycrystalline ZnO

Materials Research Society Symposium - Proceedings

Volumn 411, Issue , 1996, Pages 295-300

  Chen, T D ^a   Lee, J R ^a   Tuller, H L ^a   Chiang, Y M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CRYSTAL MICROSTRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; VARISTORS;

INTERFACIAL TRAP;

ZINC OXIDE;

EID: 0029727073     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)