Negative differential resistivity in GaN metal-semiconductor-metal photoconductors

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 789-793

  Huang, Z C ^a   Chen, J C ^a   Zheng, Youdou ^a   Mott, D B ^a  

^a HUGHES STX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELDS; GUNN DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; PHOTOCONDUCTING MATERIALS;

GALLIUM NITRIDE; METAL SEMICONDUCTOR METAL DEVICES; NEGATIVE DIFFERENTIAL RESISTIVITY; THRESHOLD FIELD; TRANSFERRED ELECTRON EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726918     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)