Incorporation of nitrogen atoms at Si/SiO2 interfaces of field effect transistors (FETs) to improve device reliability

Materials Research Society Symposium - Proceedings

Volumn 405, Issue , 1996, Pages 321-326

  Lucovsky, G ^a   Lee, D R ^a   Jing, Z ^a   Whitten, J L ^a   Parker, C ^a   Hauser, J R ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPOSITION EFFECTS; DIELECTRIC FILMS; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SURFACE STRUCTURE; ULTRATHIN FILMS;

SPATIAL NITROGEN ATOM CONFINEMENT;

FIELD EFFECT TRANSISTORS;

EID: 0029726904     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)