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Volumn 405, Issue , 1996, Pages 99-108
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Damage, strain and quantum confinement issues in dry etched semiconductor nanostructures
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL MICROSTRUCTURE;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
RAMAN SCATTERING;
REACTIVE ION ETCHING;
REFLECTOMETERS;
RESIDUAL STRESSES;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WIRES;
ELECTRON BEAM PATTERNING;
PHOTOREFLECTANCE;
POLAR SEMICONDUCTOR SYSTEMS;
QUASI PARABOLIC CONFINING POTENTIAL;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0029726820
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (32)
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