Growth of high quality InGaN films by metallorganic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 273-278

  Roberts, J C ^a   McIntosh, F G ^a   Boutros, K S ^a   Bedair, S M ^a   Moussa, M ^a   Piner, E L ^a   He, Y ^a   El Masry, N A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; HETEROJUNCTIONS; INDIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; VAPOR PRESSURE; X RAY DIFFRACTION;

BAND EDGE EMISSION; INDIUM GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTRA;

FILM GROWTH;

EID: 0029726679     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)