Low temperature growth of oriented gallium nitride using pulsed laser deposition

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 343-348

  Leuchtner, Robert ^a   Brock, W ^a   Li, Y ^a   Hristakos, L ^a  

^a UNIVERSITY OF NEW HAMPSHIRE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM GROWTH; LOW TEMPERATURE EFFECTS; MORPHOLOGY; NITRIDES; OPTICAL MICROSCOPY; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMBIENT PRESSURE; FILM MORPHOLOGY; GALLIUM NITRIDE; LOW TEMPERATURE GROWTH; PULSED LASER DEPOSITION; ROCKING CURVE; TARGET MATERIAL;

SEMICONDUCTOR GROWTH;

EID: 0029726429     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)