New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 307-312

  Piner, E L ^a   He, Y W ^a   Boutros, K S ^a   Mcintosh, F G ^a   Roberts, J C ^a   Bedair, S M ^a   El Masry, N A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; OPTICAL PROPERTIES; SAPPHIRE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

ATOMIC LAYER EPITAXY; BUFFER LAYERS; DISLOCATION DENSITY; GALLIUM NITRIDE; MOLECULAR STREAM EPITAXY; STRUCTURAL QUALITY; TWO DIMENSIONAL GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726428     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)