Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 79-84

  Kouvetakis, John ^a   McMurran, Jeffrey ^a   Beach, David B ^a   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CRYSTALLINE MATERIALS; ELECTRON MICROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STOICHIOMETRY; SUBSTRATES;

CARBON RESONANCE SPECTROSCOPY; CROSS SECTIONAL ELECTRON MICROSCOPY; INORGANIC PRECURSOR; OXYGEN RESONANCE SPECTROSCOPY;

FILM GROWTH;

EID: 0029726175     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)