Heteroepitaxy of diamond on silicon

Ceramics International

Volumn 22, Issue 5, 1996, Pages 443-448

  Jiang, Xin ^a   Klages, Claus Peter ^a  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; GRAIN BOUNDARIES; NUCLEATION; PHYSICAL PROPERTIES; SILICON WAFERS; SUBSTRATES; THERMODYNAMIC PROPERTIES; THIN FILMS;

GRAIN BOUNDARY ANGLE DISTRIBUTION; HETEROEPITAXY;

DIAMONDS;

EID: 0029725271     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/0272-8842(95)00114-X     Document Type: Review

References (25)

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