Optical properties of InGaAs(P)/InP under group V sublattice two-phase interdiffusion

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 289-296

  Li, E Herbert ^a   Micallef, Joseph ^a   Shui, W C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARACTERIZATION; EXCITONS; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); MATHEMATICAL MODELS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

CONCENTRATION RATIO; DIFFUSION COEFFICIENT; DIFFUSION MECHANISM; DISORDERING PROCESS; PSEUDO TIME DEPENDENT CALCULATION; SUBLATTICE TWO PHASE INTERDIFFUSION; TRANSITION STATE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029725261     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)