Buried source and drain (BSD) structure for ultra-shallow junction using selective deposition of highly doped amorphous silicon

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 176-177

  Mitani, Y ^a   Mizushima, I ^a   Kambayashi, S ^a   Koyama, H ^a   Takagi, M T ^a   Kashiwagi, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; ETCHING; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; TEMPERATURE;

BURIED SOURCE AND DRAIN STRUCTURE; DOPANT CONCENTRATION; HALL MEASUREMENTS; MICROLOADING EFFECT; SOLID PHASE EPITAXY; ULTRA SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0029725247     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)