Single electron transistors (SETs) with Nb/Nb oxides system fabricated by atomic force microscope (AFM) nano-oxidation process

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 182-183

  Shirakashi, Jun ichi ^a   Ishii, Masami ^a   Matsumoto, Kazuhiko ^a   Miura, Naruhisa ^a   Konagai, Makoto ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE OPERATIONS; MAGNETRON SPUTTERING; NANOTECHNOLOGY; NIOBIUM; OXIDATION; OXIDES; ULTRATHIN FILMS;

CURRENT OSCILLATION CHARACTERISTICS; NANOOXIDATION; PERIODICITY; SINGLE ELECTRON CHARGING EFFECTS; SINGLE ELECTRON TRANSISTORS; ULTRASMALL TUNNEL JUNCTION;

TRANSISTORS;

EID: 0029725157     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/drc.1996.546429     Document Type: Conference Paper

References (3)