Formation of Si quantum dots in nanocrystalline silicon

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 605-608

  Schoenfeld, O ^a   Zhao, X ^b   Christen, J ^a   Hempel, T ^a   Nomura, S ^b   Aoyagi, Y ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

BLUE LIGHT EMISSION; LUMINESCENCE BAND; NANOCRYSTALLINE SILICON; QUANTUM SIZE EFFECTS; ROOM TEMPERATURE PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029725088     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00371-1     Document Type: Article

References (11)

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