Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 160-161

  Diogu, K K ^a   Harris, G L ^a   Mahajan, A ^a   Adesida, I ^a   Moeller, D F ^a   Bertram, R A ^a  

^a HOWARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; LINEAR INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MESFET DEVICES; SILICON CARBIDE;

CIRCUIT GAIN; CURRENT SOURCES; GATE GEOMETRIES;

OPERATIONAL AMPLIFIERS;

EID: 0029724908     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)