Ultrahigh-speed InGaAs/GaAs MQW lasers with C-doped active regions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2684, Issue , 1996, Pages 153-161

  Czotscher, Konrad ^a   Larkins, E C ^a   Weisser, S ^a   Benz, W ^a   Daleiden, J ^a   Esquivias, Ignacio ^a   Fleissner, Joachim ^a   Maier, M ^a   Ralston, John D ^a   Romero, B ^a   Schoenfelder, A ^a   Rosenzweig, Josef ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER DIODES; P-DOPED DEVICES; ULTRAHIGH SPEED LASERS;

DOPING (ADDITIVES); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAFAST PHENOMENA;

SEMICONDUCTOR LASERS;

EID: 0029724820     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)