Growth of ternary and quaternary compounds on non-planar InP substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 515-516

  Mullan, C A ^a   Robinson, B J ^a   Thompson, D A ^a   Weatherly, G C ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY; NONPLANAR SUBSTRATES; PLANAR SUBSTRATES; QUATERNARY COMPOUNDS; TERNARY COMPOUNDS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0029724393     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)