Application of quantum Hall devices for FIR detection

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 469-472

  Suchalkin, S ^a   Vasilyev, Yu ^a   Ivanov, Yu ^a   Ivanov, S ^a   Kop'ev, S ^a   Meltser, B ^a   Ohyama, T ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLOTRON RESONANCE; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTIONS; INFRARED DETECTORS; LASER PULSES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE;

BIAS CURRENT; PHOTOINDUCED BREAKDOWN; QUANTUM HALL DEVICES; SHUBNIKOV DE HAAS OSCILLATIONS; TUNABLE GERMANIUM CYCLOTRON RESONANCE LASERS; TWO DIMENSIONAL ELECTRON GAS;

PHOTODETECTORS;

EID: 0029723516     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00312-6     Document Type: Article

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