Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 549-554

  Fons, P ^a   Niki, S ^a   Yamada, A ^a   Okada, A ^a   Tweet, D J ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CHALCOPYRITE SYMMETRY; COPPER INDIUM SELENIDE; HETEROEPITAXIAL MISFIT; HETEROEPITAXIALLY GROWN THIN FILMS; LINEARLY GRADED BUFFERS; STRAINED INDUCED DIFFUSION; X RAY DIFFRACTION MEASUREMENTS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 0029723269     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)