Energy up-conversion at GaAs-GaInP2 and GaAs-AlGaInP2 interfaces caused by cold Auger processes

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 85-90

  Driessen, F A J M ^a   Cheong, H M ^a   Mascarenhas, A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; ENERGY CONVERSION; ENERGY GAP; INTERFACES (MATERIALS); LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY;

COLD AUGER PROCESSES; COLD ENERGY UP CONVERSION; ELECTRON HOLES; EXCITATION ENERGY; METASTABLE STATES; UP CONVERTER PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

PHOTOLUMINESCENCE;

EID: 0029723051     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)