Amorphous SiO2 precipitates at silicon grain boundaries

Materials Science Forum

Volumn 207-209, Issue PART 2, 1996, Pages 713-716

  Duscher, G ^a   Mullejans H ^a   Werner, J ^b   Ruhle M ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

EELS; Electrical Activity; Grain Boundary; Precipitate; Si; SiO2

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; HEAT TREATMENT; INTERFACES (MATERIALS); SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL ACTIVITY; OXIDATION STATES; SILICON BICRYSTALS; SILICON DIOXIDE PRECIPITATES;

SILICA;

EID: 0029722346     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (13)

1. L. Kazmerski, J. R. Dick, J.Vac.Scie.Technol. A2, 1120 (1984)
2. H.-J. Stützler, PhD thesis at the University of Stuttgart (1986)
3. M. Kohyama, R. Yamamoto, Phys.Rev.B 50, 8502 (1994)
4. H. Müllejans, J. Bruley, J.Micr. (1995) in press
5. C. Scheu, G. Dehm, R. Brydson, H.Müllejans, M.Rühle, this proceedings
6. L. Dori, J. Bruley, D. J. DiMaria, P. E. Batson, J. Tornello, M. Arienzo, J.Appl.Phys. 69, 2317 (1991)
7. P.E. Batson, Nature 366, 727 (1993)
8. C. Gatts,. G. Duscher, H.Müllejans, M.Rühle, Ultramicroscopy (1995) in press
9. F.A. Ponce, S. Hahn, Mat.Res.Soc.Symp.Proc. 31, 153 (1984)
10. M. Aucouturier, A. Broniatowski, A. Chari, J.L. Maurice, in Polycrystalline Semiconductor, Ed. by H. Möller, H.P. Strunk, J.H. Werner (Springer, Berlin, 1989)
11. L.L. Kazmerski, P.E. Russel, J.Phys.Colloque 43, C1-177 (1982)
12. J.H. Werner, Inst.Phys.Conf.Ser. 104, 63 (1989)
13. S.Martinuzzi, H. Poitevin, M. Zehaf, C. Zurletto, Revue Phy. Appl. 22, 645 (1987)