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Volumn 40, Issue 1-8, 1996, Pages 715-718
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Second-order resonant Raman scattering in semiconductor quantum wells under high magnetic fields
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Author keywords
[No Author keywords available]
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Indexed keywords
BACKSCATTERING;
BAND STRUCTURE;
MAGNETIC FIELD EFFECTS;
MATHEMATICAL MODELS;
NATURAL FREQUENCIES;
PHONONS;
POLARIZATION;
PROBABILITY;
RAMAN SCATTERING;
RESONANCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
ELECTRON PHONON INTERACTIONS;
FORBIDDEN CROSSED POLARIZATIONS;
FROHLICH INTERACTIONS;
PHONON CONFINEMENT;
SECOND ORDER RESONANCE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0029722155
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(95)00349-5 Document Type: Article |
Times cited : (1)
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References (14)
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