Investigation of charging damage induced Vt mismatch for submicron mixed-signal technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 33-36

  Zhao, J ^a   Chen, H S ^a   Teng, C S ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); ION IMPLANTATION; OPTIMIZATION; OVERVOLTAGE PROTECTION; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE CONTROL;

ION IMPLANTATION CHARGING DAMAGE; MIXED SIGNAL DESIGN; PROCESS OPTIMIZATION; TRANSISTOR MATCHING PROPERTIES;

TRANSISTORS;

EID: 0029721911     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)