Unified model for n-channel hot-carrier degradation under different degradation mechanisms

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 289-293

  Pagey, M ^a   Milanowski, R ^a   Snyder, E ^a   Bui, N ^a   Deem, B ^a   Bhuva, B ^a   Kerns, S ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS; STRESSES;

CIRCUIT RELIABILITY SIMULATORS; DOMINANT DEGRADATION MODES; HOT CARRIER DEGRADATION;

MOSFET DEVICES;

EID: 0029721908     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1996.492132     Document Type: Conference Paper

References (21)