Properties of silicon-on-defect-layer material

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 745-750

  Li, Jianming ^a   Jones, K W ^a   Coleman, J H ^a   Yi, J ^a   Wallace, R ^a   Anderson, W A ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; ION IMPLANTATION; MOS DEVICES; OXIDES; OXYGEN; PROTONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SURFACES;

ELECTRON MOBILITY; GETTERING; SILICON ON DEFECT LAYER; SILICON OXIDE; SPREADING RESISTIVITY MEASUREMENT;

SILICON WAFERS;

EID: 0029720477     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)