Effect of composition modification on the optical polarization independence in semiconductor strain quantum wells

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 277-282

  Choy, Wallace C H ^a   Feng, Hao ^a   Kam, S K ^a   Li, E Herbert ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMICAL MODIFICATION; COMPOSITION EFFECTS; INTERDIFFUSION (SOLIDS); LIGHT MODULATORS; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

ELECTROABSORPTION EFFECT; HOLE STATES; OPTICAL POLARIZATION INDEPENDENCE; POLARIZATION INSENSITIVITY; SEMICONDUCTOR STRAIN QUANTUM WELLS; TENSILE STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029720033     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)