Water re-absorption into hygroscopic film in interlayer dielectrics and its impact on hot-carrier immunity

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 116-117

  Ikeda, Koichi ^a   Okazaki, Yukio ^a   Nakayama, Satoshi ^a   Tsuchiya, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEGRADATION; DEUTERIUM; GATES (TRANSISTOR); HOT CARRIERS; MOLECULES; MOSFET DEVICES; OXIDES; SPECTROSCOPY; WATER ABSORPTION;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; DEUTERIUM SUBSTITUTED WATER; GATE OXIDES; HOT CARRIER IMMUNITY; HYGROSCOPIC FILM; INTERLAYER DIELECTRICS; LIGHTLY DOPED DRAIN; THERMAL DESORPTION SPECTROSCOPY; WATER REABSORPTION;

DIELECTRIC FILMS;

EID: 0029720016     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)