Ohmic metal self-aligned gate power double-hetero FET for unity supply voltage operation in digital cellular

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 130-131

  Nishitsuji, Mitsuru ^a   Masato, Hiroyuki ^a   Morimoto, Shigeru ^a   Inoue, Kaoru ^a   Ota, Yorito ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DOUBLE HETERO EPITAXIAL STRUCTURE; OHMIC METAL SELF ALIGNED GATE; UNITY SUPPLY VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0029719919     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)