Effect of lateral confinement on excitonic wavefunctions in T-shaped edge quantum wires

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 315-318

  Someya, T ^a   Akiyama, H ^a,b   Yamauchi, M ^a,c   Sugawara, H ^a,d   Sakaki, H ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Mathematical Systems Institute Inc   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ELECTRONS; EXCITONS; MAGNETIC PROPERTIES; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; DIAMAGNETIC SHIFTS; EFFECT OF LATERAL CONFINEMENT; EXCITONIC WAVEFUNCTIONS; MAGNETO PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0029719232     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00319-3     Document Type: Article

References (7)

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