Plasma charging induced gate oxide damage during metal etching and ashing

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 113-116

  Lin, H C ^a   Perng, C H ^a   Chien, C H ^a   Chiou, S G ^a   Chang, T F ^a   Huang, T Y ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; HELICONS; LEAKAGE CURRENTS; MOS DEVICES; REACTIVE ION ETCHING; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

ASHING; GATE OXIDE; HELICON WAVE ETCHER; HIGH DENSITY PLASMA REACTORS; INDUCTIVELY COUPLED PLASMA; METAL ETCHING; PLASMA CHARGING; PLASMA DAMAGE; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE;

PLASMA ETCHING;

EID: 0029719005     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)