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Volumn 20, Issue 1, 1996, Pages 105-110
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Photoluminescence and dark current of p-doped InGaAs/AlxGa1-xAs strained multiple quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
INFRARED DETECTORS;
LIGHT ABSORPTION;
LIGHT EMISSION;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
BARRIER HEIGHTS;
DARK CURRENT;
INTERSUBBAND ABSORPTION;
MOLE FRACTION;
TEMPERATURE DEPENDENCE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0029718473
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1006/spmi.1996.0054 Document Type: Article |
Times cited : (3)
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References (15)
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