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Volumn 20, Issue 1, 1996, Pages 105-110

Photoluminescence and dark current of p-doped InGaAs/AlxGa1-xAs strained multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INFRARED DETECTORS; LIGHT ABSORPTION; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0029718473     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0054     Document Type: Article
Times cited : (3)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.