Qualitative and quantitative analysis of stacking disorder in α- and β-SiC by X-ray diffraction and structure modeling

Materials Research Society Symposium - Proceedings

Volumn 410, Issue , 1996, Pages 235-240

  Palosz, Bogdan ^a   Stel'makh, Svetlana ^a   Gierlotka, Stanislaw ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; MATHEMATICAL MODELS; ORDER DISORDER TRANSITIONS; POLYCRYSTALS; PROBABILITY; STACKING FAULTS; X RAY DIFFRACTION ANALYSIS;

POISSON FUNCTION; POLYTYPE PHASE TRANSFORMATION;

SILICON CARBIDE;

EID: 0029718145     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)