CH4/H2/N2 reactive ion beam etching for InP based photonic devices

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 125-128

  Peyre, J L ^a   Gaumont, E ^a   Labourie, C ^a   Pinquier, A ^a   Jarry, Ph ^a   Gentner, J L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; HYDROGEN; ION BEAMS; METHANE; MORPHOLOGY; OPTICAL DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SURFACES;

PHOTONIC DEVICES; REACTIVE ION BEAM ETCHING (RIBE); SURFACE MORPHOLOGY;

REACTIVE ION ETCHING;

EID: 0029718057     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)