Formation of quantum wires by strain-induced lateral-layer ordering process: growth mechanism and device applications

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 241-252

  Cheng, K Y ^a   Hsieh, K C ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

COMPOSITION MODULATION; GROWTH MECHANISM; QUANTUM WIRE FORMATION; STRAIN INDUCED LATERAL LAYER ORDERING PROCESS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0029717441     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (28)