Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented InGaAs/GaAs heterostructures

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 659-663

  Guimaraes F E G ^a   Gonzalez Borrero P P ^a   Lubyshev, D ^a   Basmaji, P ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE STRUCTURE;

ALLOY PROPERTIES; GROWTH NUCLEATION; INTERFACE ROUGHNESS; PHOTOLUMINESCENCE MEASUREMENT; REFLECTION HIGH ELECTRON ENERGY DIFFRACTION MEASUREMENT; SURFACE KINETICS; SURFACE ORIENTATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029717281     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00382-7     Document Type: Article

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