Transport and Schottky properties of GaInP capped GaInAs/InP quantum wells with extremely high electron mobilities

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 689-692

  Ramvall, P ^a   Anand, S ^a   Carlsson, N ^a   Carlsson, S B ^a   Omling, P ^a   Samuelson, L ^a   Seifert, W ^a   Tidlund, P ^a   Wang, Q ^a   Wernersson, L E ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ELECTRON MOBILITY; PSEUDOMORPHIC CAPPING LAYER; SCHOTTKY PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029716362     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)