Monolithic 40-GHz 670-mW HBT grid amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 1123-1126

  Liu, Cheh Ming ^a   Sovero, Emilio A ^a   Ho, Wu Jing ^a   Higgins, J A ^a   De Lisio, Michael P ^a   Rutledge, David B ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; ELECTRIC POWER MEASUREMENT; EQUIVALENT CIRCUITS; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TUNING;

COMMON MODE OSCILLATIONS; MONOLITHIC GRID AMPLIFIER; PEAK POWER ADDED EFFICIENCY;

MICROWAVE AMPLIFIERS;

EID: 0029716047     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)