Ballistic-electron-emission microscopy (BEEM) studies-of GaInP/GaAs heterostructures

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 79-83

  O'Shea, J J ^a   Reaves, C M ^a   Chin, M A ^a   Denbaars, S P ^a   Gossard, A C ^a   Narayanamurti, V ^a   Jones, E D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; ELECTRON EMISSION; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BALLISTIC ELECTRON EMISSION MICROSCOPY; BAND DISCONTINUITY; BAND GAP REDUCTION; BAND OFFSETS; CONDUCTION BANDS; VALENCE BAND; VALENCE BAND SPLITTING;

HETEROJUNCTIONS;

EID: 0029715144     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)