Growth of GaAs/AlGaAs quantum dots using self-organized InP stressors

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 129-134

  Hanna, M C ^a   Lu, Z H ^a   Cahill, A F ^a   Heben, M J ^a   Nozik, A J ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

ENERGY REDSHIFTS; GROWTH CONDITION; ISLAND FORMATION; LATERAL CONFINEMENT; SELF ORGANIZED INDIUM PHOSPHIDE STRESSORS; STRAIN INDUCED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029715070     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)