Very high power S-band SiGe heterojunction bipolar transistors

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 42-43

  Hobart, K D ^a   Kub, F J ^a   Thompson, P E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

BAND GAP GRADING; SELF ALIGNED POLYSILICON EMITTER PROCESS; SILICON GERMANIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029714860     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)