Light-scattering determination of electron tunneling gaps in double quantum wells

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 291-293

  Plaut, A S ^a,b   Pinczuk, A ^a   Dennis, B S ^a   Eisenstein, J P ^a   Pfeiffer, L N ^a   West, K W ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; ELECTRON TUNNELING; FERMI LEVEL; GEOMETRY; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; VECTORS;

ALUMINUM GALLIUM ARSENIDE; CHARGE DENSITY EXCITATION; COULOMB INTERACTION; FERMI WAVEVECTOR; HARTREE APPROXIMATION; RESONANT INELASTIC LIGHT SCATTERING TECHNIQUE; SINGLE PARTICLE TUNNELING GAP; SPIN DENSITY EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029714242     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00267-7     Document Type: Article

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