Mobility enhancement in MBE-grown InxGa1-xAs/In0.52Al0.48As modulation-doped heterostructures

Superlattices and Microstructures

Volumn 19, Issue 3, 1996, Pages 159-167

  Yoon, S F ^a   Miao, Y B ^a   Radhakrishnan, K ^a   Duan, H L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MBE Technology Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

HALL MOBILITIES; INTERFACIAL STRAIN; LOW TEMPERATURE PHOTOLUMINESCENCE MEASUREMENT; MOBILITY ENHANCEMENT; MODULATION DOPED HETEROSTRUCTURE; QUANTUM SIZE EFFECT;

HETEROJUNCTIONS;

EID: 0029714073     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0019     Document Type: Article

References (12)

1. D. C. Streit, K. L. Tan, R. M. Dia, J. K. Liu, A. C. Han, J. R. Velebir, S. K. Wang, T. Q. Trinh, P. M. Chow, P. H. Liu and H. C. Yen, IEEE Electr. Dev. Lett. 12, 149 (1991).
2. D. Yang, P. K. Bhattacharya, T. Brock, S. A. Alterovitz, S. R. Taub and P. G. Young, IEEE Electr. Dev. Lett. 15, 209 (1994).
3. J. M. Kuo, B. Lalevic and T. Y. Chang, J. Vac. Sei. Technol. B 5, 782 (1987).
4. W. P. Hong, G. I. Ng, P. K. Bhattacharya, D. Pavlidis and S. Willing, J. Appl. Phys. 64, 1945 (1988).
5. A Chin and T. Y. Chang, J. Vac. Sci. Technol. B 8, 364 (1990).
6. S. Sasa, Y. Nakata, Y. Sugiyama, T. Fujii and E. Miyauchi, J. Cryst. Growth 95, 189 (1989).
7. P. Basu and B. Nag, Appl. Phys. Lett. 43, 689 (1983).
8. V. Arora and A. Naeem, Phys. Rev. B 31, 3887 (1985).
9. J. A. Brun and G. Bastard, Solid State Commun. 53, 727 (1985).
10. R. People, Appl. Phys. Lett. 50, 1604 (1987).
11. T. Saku, Y. Hirayama and Y. Horikoshi, Jpn. J. Appl. Phys. 30, 902 (1991).
12. T. Nakayama, H. Miyamoto, E. Oishi and N. Samoto, Proc-8th Int'l Conf. on MBE, Aug 29-Sep 2, Osaka, Japan, 424 (1994).