Self-organized growth of quantum-dot structures

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 777-783

  Notzel R ^a,c   Temmyo, J ^b   Kozen, A ^b   Tamamura, T ^b   Fukui, T ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPECTROSCOPY; STRAIN; SUBSTRATES; SURFACES;

BURIED QUANTUM DISK STRUCTURES; SELF ORGANIZATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029713879     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00363-0     Document Type: Article

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