Absorption saturation mechanism in short-period GaAs/AlAs superlattice self-electro-optic effect devices based on Wannier-Stark localization

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 171-174

  Mimura, H ^a   Hosoda, M ^a   Tominaga, K ^a   Watanabe, T ^a   Fujiwara, K ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTROOPTICAL DEVICES; ELECTROOPTICAL EFFECTS; LASER MODE LOCKING; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRIC FIELD SCREENING; OBJECTIVE LENS; PHOTOCURRENT VOLTAGE CHARACTERISTICS; QUANTUM CONFINED STARK EFFECT; SELF ELECTROOPTIC EFFECT DEVICES; TIME RESOLVED PHOTOCURRENT; TIME RESOLVED PHOTOLUMINESCENCE; WANNIER-STARK LOCALIZATION; WET CHEMICAL ETCHING;

SEMICONDUCTOR SUPERLATTICES;

EID: 0029713871     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00240-5     Document Type: Article

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